Crystal Growth: Theory and Techniques Volume 2 by G. H. Olsen, M. Ettenberg (auth.), C. H. L. Goodman (eds.)

By G. H. Olsen, M. Ettenberg (auth.), C. H. L. Goodman (eds.)

The technological know-how and artwork of crystal starting to be proceed to flourish; regardless of expanding figuring out of the technological know-how, "feel" and talent proceed to play their important half, as was once so essentially evidenced on the contemporary Boston foreign convention on Crystal progress. the purpose of this quantity, almost like that of the 1st, is to attempt to enhance realizing by way of supplying precise discussions of crystal progress recommendations and difficulties that come up with them. the printed paper within the really expert literature is just too restricted a car, via conference and by way of editorial strain on size, to debate issues intimately, but it's within the small info born of expertise that important details can usually lie hid. a tremendous target of this sequence, as a result, has been to inspire individuals to explain fairly absolutely what has been completed of their specific fields. the subsequent quantity of this sequence is now good underway and plans for quantity four are complicated. in the event you, the reader, think that a few very important element of crystal progress is being unjustifiably ignored, might be you'll want to ponder delivering a contribution! or even in case you don't desire to do this, please do supply criticism-preferably positive. i'm hoping that the current quantity will end up as worthwhile and fascinating to crystal growers as it sounds as if did the 1st quantity of the sequence; definitely the nice and cozy commendations that that quantity has elicited have been an outstanding encouragement for the current paintings. ultimately it's a excitement to thank regular Telecommunication Laboratories for its carrying on with support.

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A. Jesser and D. Kuhlmann-Wilsdorf, Phys. Status Solidi 19, 95 (1967). 5. J. W. ), Epitaxial Growth, Academic Press, New York (1975). 6. A. Y. Cho, J. Vac. Sci. Techno/. 8, 531 (1971). 7. M. J. Stowell, in Epitaxial Growth, J. W. ), Academic Press, New York (1975). 8. E. Peissker. P. Mossen, and H. Alexander, Phil. Mag. 7, 1279 (1962). 9. Y. Tauri, Y. Komiya, and Y. Harada, J. Electrochem. Soc. 118, 118 (1971). Heteroepitaxy of 111-V Compounds: Growth Effects 55 10. G. H. Olsen, M. S. Abrahams, and T.

Mossen, and H. Alexander, Phil. Mag. 7, 1279 (1962). 9. Y. Tauri, Y. Komiya, and Y. Harada, J. Electrochem. Soc. 118, 118 (1971). Heteroepitaxy of 111-V Compounds: Growth Effects 55 10. G. H. Olsen, M. S. Abrahams, and T. J. Zamerowski, J. Electrochem. Soc. 121, 1650 (1974). 11. J. J. Tietjen and J. A. Amick, J. Electrochem. Soc. 113, 724 (1966). 12. V. S. Ban, J. Crystal Growth 17, 19 (1972). 13. C. T. Foxon, J. A. Harvey, and B. A. Joyce, J. Phys. Chern. Solids 34, 1693 (1973); R. F. C. Farrow, J.

Although step-grading does not appear to be as effective in LPE growth as in VPE growth, simple growth interruptions without changing the composition in LPE growth can be used to reduce dislocation densities. (76) In homoepitaxial GaP growth, dislocation densities were reduced from -5 x lOS to -1 X lOS cm-2 by such cooling rate interruptions. Similarly, in the heteroepitaxial growth of GaAs on GaP, densities were reduced from 6 x 107 to 5 x 1<1 cm-2 by multibin epitaxy. This technique is effective, providing about a factor of 2 for each interruption, but does not seem capable of reducing dislocation densities much lower than lOS cm-2 • The LPE growth interruptions bend dislocations over at the interface, but are not as effective as VPE step-grading.

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